4 edition of Quantized Hall Resistance found in the catalog.
Quantized Hall Resistance
Intrinsic-Derived Standards Committee
by National Conference of Standards Laboratories
Written in English
|The Physical Object|
|Number of Pages||64|
We present precision measurements of the fractional quantized Hall effect, where the quantized resistance in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance, represented by an integer quantum Hall state at filling factor 2.A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly . means it’s official. Federal government websites often end Before sharing sensitive information, make sure you’re on a federal government site.
VOI vM+ $5s +vMQ&R PHYSIC:AI. REVIEW LETTERS 11 AvGvsY ew et od for High-Accuracy Determination of th e Fine--Structure Constant Based on Quantized Hall Resistance K. v. Klitzing Hsysikalisches Institut der Universitat Wurzburg, D ~iirgburg, Federal Re b IIochfeld-Ma gn etlabor des Max-Planck -Institut urgburg, I'ederal Republic of Germany, and x-anc-nstituts pier . 1. Introduction. The quantum Hall effect was discovered by von Klitzing, Dorda, and Pepper in .They reported that measurements of the Hall resistance R H on Si MOSFETS showed a step-like structure at high magnetic fields. The plateaus of these steps were found to be quantized to values very close to h/ie 2, where h is the Planck constant, e is the electron charge, and i is an integer.
1 Quantized Hall Resistance (Qhr) to all electric-resistance units; 1 Qhr = EMU of resistance (EMU) ⇛ 1 Qhr = E-8 ESU of resistance (ESU) ⇛ 1 Qhr = E-5 gigaohm (GΩ) ⇛ 1 Qhr = kiloohm (kΩ) ⇛ 1 Qhr = megaohm (MΩ) ⇛ 1 Qhr = microohm (μΩ) ⇛ 1 Qhr = On the other hand, at high magnetic fields the Hall resistance has been observed to be quantized in units of (h/2e 2) with an accuracy that is specified in parts per million. Indeed the accuracy of the quantum Hall effect is so impressive that the National Institute of Standards and Technology is interested in utilizing it as a resistance standard.
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The quantized Hall resistance can also be written in terms of the fine structure constant a fs as () R xy = μ 0 c 2 s 0 a fs where μ 0 is the permeability of vacuum and has a value of 4 × 10 − 7 H/m. The quantized Hall resistance (Nobel Prize ) plays a crucial role for the realization of this new SI system since this quantum resistance can be used not only for high precision measurements of electrical standards, but also for a new realization of a kilogram by comparing electrical and mechanical forces with the Watt balance.
Moreover, the value of the quantized resistance is accurate even when materials contain impurities, which would otherwise change the resistance. Because of this, the quantum Hall. This book is a compilation of major reprint articles on one of the most intriguing phenomena in modern physics: the quantum Hall effect.
Together with a detailed introduction by the editor, this volume serves as a stimulating and valuable reference for students and research workers in condensed matter physics and for those with a particle physics background.5/5(1). The quantum Hall resistance measured at frequencies in the kilohertz range shows frequency- and current-dependent deviations from the quantized dc resistance value.
The discovery of the quantum Hall effect (QHE) in by Klaus von Klitzing has revolutionized the resistance metrology. Today, the quantized Hall resistance (QHR), observed in a two-dimensional electron gas exposed to a high magnetic flux at low temperatures, is used worldwide as an invariant reference for electrical calibrations.
It has improved the reproducibility of calibration results by. Due to a small standard uncertainty in reproducing the value of the quantized Hall resistance (few parts of 10 −9, Delahaye,and nowadays even better), its value was fixed infor the purpose of resistance calibration, to 25 Ω and is nowadays denoted as conventional von Klitzing constant R.
Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Preliminary. National Metrology Institute of Japan have been proposed and fabricated the quantized Hall resistance (QHR) array devices, and confirmed the performance with uncertainty of as low as 108.
The new combinations of Hall bars have been designed ranging from Ω to 1 MΩ. This new combinations realize the quantized resistance values more. a quantized Hall resistance device, a cryogenic system in which a superconducting solenoid and the Hall device are cooled to liquid helium temperatures, and a mea- surement system for comparing the standard resistor to this quantized Hall resistor.
While the selection of the sample and cryogenic system are beyond the scope of. This article reviews the progress made by many national laboratories to assess and compare the quality and limitations of semiconductor devices, mainly silicon MOSFETs and GaAs/AlGaAs heterostructures, as quantized Hall resistance standards with values R H (i) = R K /i = h/ie 2, where R K =Ω is the von Klitzing constant and i is an.
The electrical resistance(𝜌) at B=0 and B=T The Hall resistance(𝜌) Nice plateaus in the Hall resistance 𝜌 = h/i𝑒2 (h=Planck constant, e=elementary charge and i is the number of fully occupied Landau levels) The experimental curve.
The discovery of the quantum Hall effect (QHE) in by Klaus von Klitzing has revolutionized the resistance metrology. Today, the quantized Hall resistance (QHR), observed in a two-dimensional. Abstract: The latest NIST result from the comparison of the quantized Hall resistance (QHR) with the realization of the SI ohm obtained from the NIST calculable capacitor is reported.
A small difference between the result and the present result has led to a re-evaluation of the sources and magnitudes of possible systematic errors.
Constant Based on Quantized Hall Resistance, An instructive and comprehensive overview of the QHE, this book is also suitable as an introduction to quantum field theory with vivid applications. precision measurements; quantized Hall resistance; quantum Hall effect; resis tance standards.
Accepted: Ma 1. Introduction The quantization of the Hall resistance (1) (where h is the Planck constant, e the electron charge, and i an integer quantum number) has been demonstrated for such diverse two-dimensional.
The quantum Hall effect (QHE) is a quantum phenomenon that occurs on a macroscopic length scale as the result of the non-trivial topological property of a two-dimensional electron system in a strong magnetic field.
It has long been expected that QHE can be realized without an external magnetic field such that the effect can be applied in electric devices that consume little energy. In this paper, it is shown that a quantum Hall resistor (QHR) which exhibits a proportionality relationship between the deviation of the Hall resistance from R K /i and the ac dissipation in the system, represented by ρ xx, can be used as a primary standard of ac an example, a calculable quadrifilar resistor was calibrated against the QHR at kilohertz frequencies.
About this book. The discovery of the quantized and fractional Quantum Hall Effect phenomena is among the most important physics findings in the latter half of this century.
The precise quantization of the electrical resistance involved in the quantized Hall effect phenomena has led to the new definition of the resistance standard and has.
The quantized Hall The device in which the fractional What is, most amazing about the quantized Hall effect is its degree effect, on the other hand, is the same quantized Hall effect was first seen, for samples with different geometries which is called a heterojunction, is an of precision.
Measured values of the Hall resistance at various. The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model.
We investigate the variation of the activation energy depending on the width of samples in the range. Lindelof P.E., Hansen O.P. () The quantized hall resistance and the Josephson effect. In: Landwehr G. (eds) Application of High Magnetic Fields in Semiconductor Physics.
Lecture Notes in Physics, vol General Resistance Hall Resistance Experiment of Quantum Hall Effect Theory of QHE Other Hall Effect Experiment of Quantum Hall Effect Date: 4th to 5th of February at around 2 a.m.
Location: High Magnetic Field Laboratory in Grenoble Researcher: Klaus von Klitzing Finding: Integral Quantized Hall Effect Achievement: Nobel.